IXYS SiC MOSFETs

Results: 29
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
Datasheet
392In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 79 A 39 mOhms - 5 V, + 20 V 135 nC - 55 C + 175 C 395 W Enhancement
IXYS SiC MOSFETs 1700V/750mohm SiC MOSFET TO-263-7L
Datasheet
63In Stock
Min.: 1
Mult.: 1

SMD/SMT D2PAK-7 (TO-263-7) N-Channel 1 Channel 1.7 kV 6.4 A 750 mOhms - 20 V, + 20 V 1.8 V 11 nC - 55 C + 175 C 65 W Enhancement
IXYS SiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L
Datasheet

Through Hole ISO247-4 N-Channel 1 Channel 1.2 kV 85 A 23.4 mOhms 21 V 4.8 V 155 nC - 40 C + 150 C 223.2 W Enhancement
IXYS SiC MOSFETs TO268 1.2KV 90A SIC POWER
Datasheet
Non-Stocked Lead-Time 92 Weeks
Min.: 30
Mult.: 30

SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1.2 kV 90 A 34 mOhms - 20 V, + 20 V 2 V - 40 C + 150 C