STMicroelectronics SiC MOSFETs

Results: 68
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1
Reel: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 60 A 29 mOhms -10 V, 22 V 4.2 V 82.5 nC - 55 C + 175 C 388 W Enhancement AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 600
Mult.: 600

Through Hole HiP247-3 N-Channel 1 Channel 650 V 55 A 27 mOhms -10 V, 22 V 4.2 V 76 nC - 55 C + 200 C 398 W Enhancement AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1
Through Hole HiP247-4 N-Channel 1 Channel 1.2 kV 90 A 26 mOhms - 10 V, + 22 V 4.2 V 120 nC - 55 C + 200 C 486 W AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

AEC-Q100
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 600
Mult.: 600

Through Hole HiP247-4 N-Channel 1 Channel 1.2 kV 56 A 37 mOhms -10 V, 22 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1.800
Mult.: 1.800
Reel: 1.800

STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 600
Mult.: 600

Through Hole HiP247-3 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms -10 V, 22 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 10 V, + 22 V 3 V 37 nC - 55 C + 175 C 223 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

Through Hole HiP247-4 N-Channel 1.2 kV 30 A 87 mOhms - 10 V, + 22 V 3 V 41 nC - 55 C + 200 C 236 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1

AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 448
Mult.: 448

Through Hole N-Channel 1 Channel 1.2 kV 239 A 10.5 mOhms -10 V, 22 V 4.4 V 304 nC - 55 C + 200 C 994 W Enhancement AEC-Q100
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 600
Mult.: 600

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement
STMicroelectronics SCT012HU90G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600
Reel: 600

STMicroelectronics SCT019H120G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

AEC-Q100
STMicroelectronics SCT040H65G3-7
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

STMicroelectronics SCT040W65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 600
Mult.: 600

AEC-Q100
STMicroelectronics SCT055H65G3-7
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

STMicroelectronics SCT055H65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

AEC-Q100