STMicroelectronics DM6 Series MOSFETs

Results: 5
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
STMicroelectronics MOSFETs N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
Datasheet
508In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms - 25 V, 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
Datasheet
280In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 117 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Datasheet
585In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms - 25 V, 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package
Datasheet
101In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube