QPD0060

Qorvo
772-QPD0060
QPD0060

Mfr.:

Description:
GaN FETs DC-3.6GHz GaN 90W 48V

Datasheet:
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In Stock: 29

Stock:
29 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
141,05 € 141,05 €
100,48 € 2.512,00 €
Full Reel (Order in multiples of 100)
84,93 € 8.493,00 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-6
48 V
- 40 C
Brand: Qorvo
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: QPD0060PCB4B01
Gain: 16.2 dB
Maximum Operating Frequency: 3.8 GHz
Minimum Operating Frequency: 1.8 GHz
Moisture Sensitive: Yes
Output Power: 90 W
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Series: QPD0060
Factory Pack Quantity: 100
Subcategory: Transistors
Technology: GaN
Part # Aliases: 1131037 QPD0060SR
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Attributes selected: 0

Datasheet

USHTS:
8542390090
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

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