KSC Bipolar Transistors - BJT

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Configuration Maximum DC Collector Current Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Pd - Power Dissipation Gain Bandwidth Product fT Maximum Operating Temperature Series Packaging

onsemi Bipolar Transistors - BJT NPN Planar Silicon 4.701In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 NPN Single 2 A 600 V 1.2 kV 12 V 190 mV 50 W + 150 C KSC5502 Tube

onsemi Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon 8.605In Stock
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) NPN Single 2 A 600 V 1.2 kV 12 V 400 mV 87.83 W 11 MHz + 150 C KSC5502D Reel, Cut Tape, MouseReel

onsemi Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon 1.033In Stock
1.200On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 NPN Single 5 A 450 V 1 kV 12 V 350 mV 75 W 11 MHz + 150 C KSC5338D Bulk

onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 1.056In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 NPN Single 7 A 100 V 150 V 7 V 600 mV 40 W + 150 C KSC2334 Tube
onsemi Bipolar Transistors - BJT NPN Si Transistor 3.610In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-126-3 NPN Single 1.5 A 800 V 1.1 kV 7 V 2 V 20 W 15 MHz + 150 C KSC5026M Bulk
onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 5.811In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-92-3 NPN Single 700 mA 60 V 80 V 8 V 200 mV 800 mW 50 MHz + 150 C KSC1008 Bulk
onsemi Bipolar Transistors - BJT NPN Epitaxial Transistor 5.972In Stock
4.000On Order
Min.: 1
Mult.: 1
: 2.000

Si Through Hole TO-92-3 Kinked Lead NPN Single 700 mA 60 V 80 V 8 V 200 mV 800 mW 50 MHz + 150 C KSC1008 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 3.476In Stock
2.000On Order
Min.: 1
Mult.: 1
: 2.000

Si Through Hole TO-92L-3 NPN Single 1 A 160 V 160 V 6 V 1.5 V 900 mW 100 MHz + 150 C KSC2383 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 2.245In Stock
Min.: 1
Mult.: 1
Max.: 1.740
: 2.000

Si Through Hole TO-92-3 Kinked Lead NPN Single 150 mA 50 V 60 V 5 V 100 mV 400 mW 80 MHz + 150 C KSC1815 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 6.521In Stock
52.000On Order
Min.: 1
Mult.: 1
Max.: 1.590
: 2.000

Si Through Hole TO-92-3 Kinked Lead NPN Single 50 mA 120 V 120 V 5 V 70 mV 500 mW 110 MHz + 150 C KSC1845 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Epitaxial Transistor 3.437In Stock
Min.: 1
Mult.: 1
: 2.000

Si Through Hole TO-92-3 Kinked Lead NPN Single 150 mA 50 V 60 V 5 V 150 mV 250 mW 300 MHz + 150 C KSC945 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Si Transistor Epitaxial 3.129In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-126-3 NPN Single 1.2 A 160 V 160 V 5 V 400 mV 1.2 W 155 MHz + 150 C KSC2690A Tube

onsemi Bipolar Transistors - BJT NPN Sil Planar Sil 640In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 NPN Single 3 A 800 V 1.6 kV 12 V 1.2 V 100 W 5 MHz + 150 C KSC5603D Tube
onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 5.200In Stock
Min.: 1
Mult.: 1
Max.: 270

Si Through Hole TO-126-3 NPN Single 1.2 A 160 V 160 V 5 V 400 mV 1.2 W 155 MHz + 150 C KSC2690A Bulk
onsemi Bipolar Transistors - BJT NPN Epitaxial Transistor 6.134In Stock
Min.: 1
Mult.: 1
: 2.000

Si Through Hole TO-92-3 Kinked Lead NPN Single 150 mA 50 V 60 V 5 V 150 mV 250 mW 300 MHz + 150 C KSC945 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Epitaxial Transistor 9.758In Stock
Min.: 1
Mult.: 1
: 2.000

Si Through Hole TO-92-3 Kinked Lead NPN Single 700 mA 60 V 80 V 8 V 200 mV 800 mW 50 MHz + 150 C KSC1008 Ammo Pack
onsemi Bipolar Transistors - BJT NPN Epitaxial Transistor 7.774In Stock
Min.: 1
Mult.: 1
Max.: 620
: 2.000

Si Through Hole TO-92-3 NPN Single 1 A 160 V 160 V 6 V 1.5 V 900 mW 100 MHz + 150 C KSC2383 Ammo Pack