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T2G6003028-FS

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Mouser No:

772-T2G6003028-FS

Mfr. No:

T2G6003028-FS

Mfr.:

Qorvo

Description:

GaN FETs DC-6.0GHz 30 Watt 28V GaN Flangeless

Datasheet:

T2G6003028-FS Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Package/Case:	NI-200
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	30 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	T2G6003028
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	T2G6003028 1100021
Unit Weight:	17,129 g

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Datasheet

T2G6003028-FS Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8542330000
USHTS:: 8542330001
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: EAR99

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.