PJP100N06SA-AU_T0_006A1

Panjit
241-PJP100N06SAAU6A1
PJP100N06SA-AU_T0_006A1

Mfr.:

Description:
MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 95 A

Lifecycle:
New Product:
New from this manufacturer.
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Product Attribute Attribute Value Select Attribute
Panjit
Product Category: MOSFETs
Delivery Restriction:
 Mouser does not presently sell this product in your region.
RoHS:  
Si
Through Hole
TO-220AB-3
N-Channel
1 Channel
60 V
95 A
6.1 mOhms
- 20 V, 20 V
3 V
40 nC
- 55 C
+ 175 C
100 W
Enhancement
AEC-Q101
Tube
Brand: Panjit
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 59 ns
Product Type: MOSFETs
Rise Time: 35 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 9 ns
Unit Weight: 2,095 g
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.