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MSCGLQ50DH120CTBL2NG

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Mouser No:

579-LQ50DH120CTBL2NG

Mfr. No:

MSCGLQ50DH120CTBL2NG

Mfr.:

Microchip Technology

Description:

IGBT Modules PM-IGBT-SBD-BL2

Datasheet:

MSCGLQ50DH120CTBL2NG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	IGBT Modules
Delivery Restrictions:	Mouser does not presently sell this product in your region.
Product:	IGBT Modules
Configuration:	Asymmetrical Bridge
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.4 V
Continuous Collector Current at 25 C:	110 A
Gate-Emitter Leakage Current:	150 nA
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Brand:	Microchip Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Factory Pack Quantity:	1
Subcategory:	IGBTs
Technology:	Si

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Datasheet

MSCGLQ50DH120CTBL2NG Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

High-Speed IGBT4 Power Modules

Microchip Technology High-Speed IGBT4 Power Modules feature low voltage drop, low leakage current, and low switching losses. These modules operate at 1200V collector-emitter voltage (V_CES) and provide very low stray inductance, Kelvin emitter/source for an easy drive, and extended temperature range. The benefits of IGBT4 modules are high-efficiency converters, offer outstanding performance at high-frequency operation, low profile, and low junction-to-heatsink thermal resistance. These modules are used in applications like high-reliability power systems, AC switches, high-efficiency AC/DC and DC/AC converters, and motor control.