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MJD41CQ-13

Name: Diodes Incorporated MJD41CQ-13
Brand: Diodes Incorporated
SKU: 621-MJD41CQ-13
Price: 0.9 EUR
Availability: InStock

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Mouser No:

621-MJD41CQ-13

Mfr. No:

MJD41CQ-13

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K

Datasheet:

MJD41CQ-13 Datasheet (PDF)

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In Stock: 2.493

Stock:: 2.493 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,903 €	0,90 €
	0,561 €	5,61 €
	0,369 €	36,90 €
	0,29 €	145,00 €
	0,248 €	248,00 €
Full Reel (Order in multiples of 2500)
	0,224 €	560,00 €
	0,20 €	1.000,00 €
	0,193 €	1.930,00 €
	0,187 €	4.675,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	100 V
Collector- Base Voltage VCBO:	120 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	1.5 V
Pd - Power Dissipation:	2.7 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	6 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Collector/Base Gain hFE Min:	15
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2500
Subcategory:	Transistors

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Datasheet

MJD41CQ-13 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

MJD Automotive Medium Power Transistors

Diodes Inc. MJD Automotive Medium Power Transistors are bipolar transistors that are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. Each device has a collector-emitter breakdown voltage of 50V or 100V (minimum). The Diodes Inc. MJD Automotive Medium Power Transistors come in a TO-252 (DPAK) package and are ideal for power switching or amplification applications.