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IKW08N120CS7XKSA1

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Mouser No:

726-IKW08N120CS7XKSA

Mfr. No:

IKW08N120CS7XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package

Datasheet:

IKW08N120CS7XKSA1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
Delivery Restriction:	Mouser does not presently sell this product in your region.
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	21 A
Pd - Power Dissipation:	106 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	IGBT7 S7
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW08N120CS7 SP005419704

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Datasheet

IKW08N120CS7XKSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V Gen8 IGBTs

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to +175°C.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

TRENCHSTOP™ IGBT7 Discretes & Modules

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable-speed drives. If only half of all industrial drives had electric speed control, 20% of energy or 17 million tons of CO2 could be saved. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.

TRENCHSTOP™ IGBT7 S7

Infineon Technologies TRENCHSTOP™ IGBT7 S7 offers an extensive 1200V portfolio for all industrial applications requiring short circuit capability/ruggedness. The IGBT7 S7 is an efficient short-circuit rugged discrete IGBT providing at least 10% lower saturation voltage than others.