FM28V100-TG

Infineon Technologies
877-FM28V100-TG
FM28V100-TG

Mfr.:

Description:
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM

Datasheet:
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Learn more about Infineon Technologies FM28V100-TG

In Stock: 673

Stock:
673 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
21,81 € 21,81 €
20,24 € 202,40 €
19,61 € 490,25 €
18,37 € 918,50 €
17,72 € 1.772,00 €
17,34 € 4.335,00 €
17,33 € 8.110,44 €
936 Quote

Alternative Packaging

Mfr. Part No.:
FM28V100-TGTR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
22,24 €
Min:
1

Similar Product

Infineon Technologies FM28V100-TGTR
Infineon Technologies
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
Parallel
128 k x 8
TSOP-32
60 ns
2 V
3.6 V
- 40 C
+ 85 C
FM28V100-TG
Tray
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 468
Subcategory: Memory & Data Storage
Unit Weight: 9,072 g
Products found:
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Attributes selected: 0

Datasheet

TARIC:
8542329000
CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

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