FM25V10-G

Infineon Technologies
877-FM25V10-G
FM25V10-G

Mfr.:

Description:
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Datasheet:
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Learn more about Infineon Technologies FM25V10-G

In Stock: 2.275

Stock:
2.275 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,83 € 12,83 €
11,92 € 119,20 €
11,58 € 289,50 €
11,16 € 558,00 €
10,81 € 1.081,00 €
10,66 € 2.665,00 €
10,41 € 5.205,00 €
1.940 Quote

Alternative Packaging

Mfr. Part No.:
FM25V10-GTR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
13,18 €
Min:
1

Similar Product

Infineon Technologies FM25V10-GTR
Infineon Technologies
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
SPI
25 MHz, 40 MHz
128 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM25V10-G
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 2 V to 3.6 V
Product Type: FRAM
Factory Pack Quantity: 1940
Subcategory: Memory & Data Storage
Unit Weight: 540 mg
Products found:
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Attributes selected: 0

Datasheet

TARIC:
8542329000
CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan. 

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