FM24V05-G

Infineon Technologies
877-FM24V05-G
FM24V05-G

Mfr.:

Description:
F-RAM 512K (64KX8) 3.3V F-RAM

Datasheet:
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Learn more about Infineon Technologies FM24V05-G

In Stock: 439

Stock:
439 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,63 € 9,63 €
8,96 € 89,60 €
8,69 € 217,25 €
8,28 € 414,00 €
7,96 € 796,00 €
7,76 € 1.940,00 €
7,57 € 3.671,45 €
5,79 € 5.616,30 €

Alternative Packaging

Mfr. Part No.:
FM24V05-GTR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
9,35 €
Min:
1

Similar Product

Infineon Technologies FM24V05-GTR
Infineon Technologies
F-RAM 512K (64KX8) 3.3V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
512 kbit
I2C
3.4 MHz
64 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM24V05-G
Tube
Brand: Infineon Technologies
Country of Assembly: TH
Country of Diffusion: US
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 485
Subcategory: Memory & Data Storage
Unit Weight: 540 mg
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Attributes selected: 0

Datasheet

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TARIC:
8542329000
CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
3A991.b.1.b.2

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan. 

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

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