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FFSB0865A

Name: onsemi FFSB0865A
Brand: onsemi
SKU: 863-FFSB0865A
Price: 2.66 EUR
Availability: InStock

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Mouser No:

863-FFSB0865A

Mfr. No:

FFSB0865A

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V 8A SIC SBD

Datasheet:

FFSB0865A Datasheet

ECAD Model:

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More Information

Learn more about onsemi FFSB0865A

In Stock: 725

Stock:: 725 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,66 €	2,66 €
	2,05 €	20,50 €
	1,70 €	170,00 €
	1,65 €	825,00 €
Full Reel (Order in multiples of 800)
	1,51 €	1.208,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	49 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSB0865A
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	CN
Country of Diffusion:	KR
Country of Origin:	CN
Pd - Power Dissipation:	136 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	800
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V

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Datasheet

FFSB0865A Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.