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INA849DGKT

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Mouser No:

595-INA849DGKT

Mfr. No:

INA849DGKT

Mfr.:

Texas Instruments

Description:

Instrumentation Amplifiers Ultra-low noise (1 n V/vHz) high-speed ( INA849DGKR

Datasheet:

INA849DGKT Datasheet

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Learn more about Texas Instruments INA849DGKT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Instrumentation Amplifiers
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Series:	INA849
Number of Channels:	1 Channel
3 dB Bandwidth:	28 MHz
SR - Slew Rate:	35 V/us
CMRR - Common Mode Rejection Ratio:	120 dB
Ib - Input Bias Current:	20 nA
Vos - Input Offset Voltage:	35 uV
Supply Voltage - Max:	36 V
Supply Voltage - Min:	8 V
Operating Supply Current:	80 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	VSSOP-8
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Amplifier Type:	Instrumentation
Brand:	Texas Instruments
Country of Assembly:	MY
Country of Diffusion:	DE
Country of Origin:	MY
Development Kit:	INAEVM-ALT-SO8
en - Input Voltage Noise Density:	1 nV/sqrt Hz at 1 kHz
Gain Error:	0.1 %
Gain V/V:	10000 V/V
In - Input Noise Current Density:	1.1 pA
Ios - Input Offset Current:	6 nA
Maximum Input Resistance:	1 GOhms
Moisture Sensitive:	Yes
NF - Noise Figure:	1 nV/sqrt Hz at 1 kHz
Product:	Instrumentation Amplifiers
Product Type:	Instrumentation Amplifiers
PSRR - Power Supply Rejection Ratio:	128 dB
Shutdown:	No Shutdown
Factory Pack Quantity:	250
Subcategory:	Amplifier ICs
Technology:	Si

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Datasheet

INA849DGKT Datasheet

Application Notes

How to Select Precision Amplifiers for Semiconductor Testers (Rev. A)

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CNHTS:: 8542339000
USHTS:: 8542330001
ECCN:: EAR99

INA849 Ultra-Low Noise Instrumentation Amplifier

Texas Instruments INA849 Ultra-Low Noise Instrumentation Amplifier is optimized for maximum accuracy in high-resolution systems and operation over a wide single-supply or dual-supply range. The device offers a significantly lower input bias current than competitors as a result of Super-beta input transistors. A state-of-the-art manufacturing process provides exceptionally low voltage noise, input offset voltage, and offset voltage drift.