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STP150N10F7AG

Name: STMicroelectronics STP150N10F7AG
Brand: STMicroelectronics
SKU: 511-STP150N10F7AG
Price: 4.04 EUR
Availability: InStock

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Mouser No:

511-STP150N10F7AG

Mfr. No:

STP150N10F7AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive N-channel 100 V, 4.2 mOhm typ., 110 A, STripFET F7 Power MOSFET in a

Complete Your Design

Datasheet:

STP150N10F7AG Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STP150N10F7AG

In Stock: 1.085

Stock:: 1.085 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,04 €	4,04 €
	2,21 €	22,10 €
	2,03 €	203,00 €
	1,68 €	840,00 €
	1,57 €	1.570,00 €
	1,55 €	3.875,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	110 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	117 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IT
Fall Time:	33 ns
Product Type:	MOSFETs
Rise Time:	57 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	33 ns
Unit Weight:	2 g

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Datasheet

STP150N10F7AG Datasheet (PDF)

PCN

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.