STL12N60M2

STMicroelectronics
511-STL12N60M2
STL12N60M2

Mfr.:

Description:
MOSFETs N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 H
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Datasheet:
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In Stock: 3.598

Stock:
3.598
Can Dispatch Immediately
On Order:
3.000
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1,99 € 1,99 €
1,28 € 12,80 €
0,869 € 86,90 €
0,691 € 345,50 €
0,663 € 663,00 €
Full Reel (Order in multiples of 3000)
0,612 € 1.836,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
PowerFLAT-5x6-8
- 55 C
+ 150 C
STL12N60M2
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 18 ns
Id - Continuous Drain Current: 6.5 A
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Pd - Power Dissipation: 52 W
Product Type: MOSFETs
Qg - Gate Charge: 16 nC
Rds On - Drain-Source Resistance: 495 mOhms
Rise Time: 9.2 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: Si
Tradename: MDmesh
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 56 ns
Typical Turn-On Delay Time: 9.2 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: - 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Unit Weight: 76 mg
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Datasheet

PCN

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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