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STGWA75H65DFB2

Name: STMicroelectronics STGWA75H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA75H65DFB2
Price: 4.45 EUR
Availability: OutOfStock

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Mouser No:

511-STGWA75H65DFB2

Mfr. No:

STGWA75H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long

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Datasheet:

STGWA75H65DFB2 Datasheet (PDF)

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,45 €	4,45 €
	2,49 €	24,90 €
	1,88 €	188,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	115 A
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6,100 g

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Datasheet

STGWA75H65DFB2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

STGWA75H65DFB2 HB2 IGBT

STMicroelectronics STGWA75H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA75H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.55V (typical) at an I_C of 75A.