SCT025H120G3-7

STMicroelectronics
511-SCT025H120G3-7
SCT025H120G3-7

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
100
Factory Lead Time:
21
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
14,44 € 14,44 €
11,17 € 111,70 €
9,67 € 967,00 €
9,66 € 4.830,00 €
Full Reel (Order in multiples of 1000)
8,54 € 8.540,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
H2PAK-7
N-Channel
1 Channel
1.2 kV
55 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 175 C
375 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Fall Time: 25 ns
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 27 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 23 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics  Automotive-Grade Silicon Carbide Power MOSFETs are  developed using ST's  advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices  feature low on-resistance per unit area and very good switching  performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

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