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ISC040N10NM7ATMA1

Name: Infineon ISC040N10NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC040N10NM7ATMA
Price: 2.22 EUR
Availability: InStock

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Mouser No:

726-ISC040N10NM7ATMA

Mfr. No:

ISC040N10NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 PowerTransistor, 100 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC040N10NM7ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies ISC040N10NM7ATMA1

In Stock: 827

Stock:: 827 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,22 €	2,22 €
	1,43 €	14,30 €
	1,01 €	101,00 €
	0,857 €	428,50 €
	0,742 €	742,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	130 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	4.4 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFETs
Rise Time:	3.3 ns
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17.2 ns
Typical Turn-On Delay Time:	9.4 ns
Part # Aliases:	ISC040N10NM7 SP006167253

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Datasheet

ISC040N10NM7ATMA1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.