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IMZA65R050M2HXKSA1

Name: Infineon IMZA65R050M2HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA65R050M2HXKS
Price: 6.54 EUR
Availability: InStock

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Mouser No:

726-IMZA65R050M2HXKS

Mfr. No:

IMZA65R050M2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet:

IMZA65R050M2HXKSA1 Datasheet (PDF)

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In Stock: 281

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,54 €	6,54 €
	3,82 €	38,20 €
	3,62 €	362,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	62 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	153 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	4.4 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	7.6 ns
Series:	650V G2
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	13.5 ns
Typical Turn-On Delay Time:	8.1 ns
Part # Aliases:	IMZA65R050M2H

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Datasheet

IMZA65R050M2HXKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 650V G2 MOSFETs

Infineon Technologies CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.