AS4C2M32S-6BINTR

Alliance Memory
913-AS4C2M32S-6BINTR
AS4C2M32S-6BINTR

Mfr.:

Description:
DRAM SDRAM, 64Mb, 2M X 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tape & Reel

Datasheet:
ECAD Model:
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Learn more about Alliance Memory AS4C2M32S-6BINTR

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2000)
4,67 € 9.340,00 €

Alternative Packaging

Mfr. Part No.:
AS4C2M32S-6BIN
Packaging:
Tray
Availability:
In Stock
Price:
7,51 €
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
32 bit
166 MHz
TFBGA-90
2 M x 32
5.4 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C2M32S
Reel
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 2000
Subcategory: Memory & Data Storage
Supply Current - Max: 95 mA
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Attributes selected: 0

Datasheet

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320002
JPHTS:
854232021
KRHTS:
8542321020
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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